Shopping cart

Subtotal: $0.00

G5S12005A

Global Power Technology-GPT
G5S12005A Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
$7.96
Available to order
Reference Price (USD)
1+
$7.96000
500+
$7.8804
1000+
$7.8008
1500+
$7.7212
2000+
$7.6416
2500+
$7.562
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 424pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Microchip Technology

JANTXV1N5616

Rohm Semiconductor

RRE07VTM4SFHTR

NXP Semiconductors

PMEG1020EJ,115

NTE Electronics, Inc

NTE6120

Vishay General Semiconductor - Diodes Division

V15P8HM3_A/H

Vishay General Semiconductor - Diodes Division

SS1P5L-M3/84A

Micro Commercial Co

SK3200BHE3-LTP

Vishay General Semiconductor - Diodes Division

S5DHE3_A/I

Vishay General Semiconductor - Diodes Division

LL4148-M-18

Bourns Inc.

CD1408-R1200

Top