G4S12020PM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
$32.59
Available to order
Reference Price (USD)
1+
$32.59000
500+
$32.2641
1000+
$31.9382
1500+
$31.6123
2000+
$31.2864
2500+
$30.9605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Global Power Technology-GPT's G4S12020PM Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Global Power Technology-GPT provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 64.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 1700 V
- Capacitance @ Vr, F: 2600pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Comchip Technology
UF4007-G
Vishay General Semiconductor - Diodes Division
GP02-40-E3/54
Taiwan Semiconductor Corporation
ES1ALHRVG
Vishay General Semiconductor - Diodes Division
VS-70HFL10S05
Power Integrations
QH05BZ600
Vishay General Semiconductor - Diodes Division
VS-HFA08TB60HN3
Micro Commercial Co
B5818WS-TP
KYOCERA AVX
SD2010S040S3R0
onsemi
1N5406G
Vishay General Semiconductor - Diodes Division