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G4S12020D

Global Power Technology-GPT
G4S12020D Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
$20.47
Available to order
Reference Price (USD)
1+
$20.47000
500+
$20.2653
1000+
$20.0606
1500+
$19.8559
2000+
$19.6512
2500+
$19.4465
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 75A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 2600pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
  • Operating Temperature - Junction: -55°C ~ 175°C

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