G4S12020BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
$32.59
Available to order
Reference Price (USD)
1+
$32.59000
500+
$32.2641
1000+
$31.9382
1500+
$31.6123
2000+
$31.2864
2500+
$30.9605
Exquisite packaging
Discount
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The G4S12020BM by Global Power Technology-GPT is a reliable and efficient solution in the Discrete Semiconductor Products market, specifically for Diodes - Rectifiers - Arrays. These diodes are designed to deliver consistent performance in various applications, from industrial equipment to consumer electronics. With features like high surge capability and excellent thermal management, the G4S12020BM stands out as a superior choice. Global Power Technology-GPT is committed to providing top-quality products that meet global standards. Get in touch with us now for detailed specifications and pricing!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 33.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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