G4S12010PM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$18.83
Available to order
Reference Price (USD)
1+
$18.83000
500+
$18.6417
1000+
$18.4534
1500+
$18.2651
2000+
$18.0768
2500+
$17.8885
Exquisite packaging
Discount
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Discover high-quality G4S12010PM Single Rectifier Diodes from Global Power Technology-GPT, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Global Power Technology-GPT's G4S12010PM delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 1700 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
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