G4S06530BT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 30A 3-PI
$17.28
Available to order
Reference Price (USD)
1+
$17.28000
500+
$17.1072
1000+
$16.9344
1500+
$16.7616
2000+
$16.5888
2500+
$16.416
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the G4S06530BT from Global Power Technology-GPT for superior Diodes - Rectifiers - Arrays solutions within the Discrete Semiconductor Products range. These diodes are optimized for precision and durability, making them suitable for high-stakes applications. The G4S06530BT features excellent thermal performance and high surge current tolerance, ensuring reliability in harsh environments. Global Power Technology-GPT is a name you can trust for cutting-edge semiconductor technology. Don t hesitate contact us now for more information and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 39A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
Related Products
IXYS
DSEC16-12AS-TRL
Vishay General Semiconductor - Diodes Division
VB40M120C-E3/8W
SMC Diode Solutions
30CTQ060-1
onsemi
NRVBD640VCTT4G
Diodes Incorporated
BAV199-7-F
Vishay General Semiconductor - Diodes Division
VT3060G-M3/4W
Microchip Technology
APT2X61D60J
SMC Diode Solutions
401CMQ035
Taiwan Semiconductor Corporation
BAV99L
GeneSiC Semiconductor