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G4S06510QT

Global Power Technology-GPT
G4S06510QT Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A DFN8
$6.62
Available to order
Reference Price (USD)
1+
$6.62000
500+
$6.5538
1000+
$6.4876
1500+
$6.4214
2000+
$6.3552
2500+
$6.289
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 44.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: 4-DFN (8x8)
  • Operating Temperature - Junction: -55°C ~ 175°C

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