G4S06510JT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
$5.19
Available to order
Reference Price (USD)
1+
$5.19000
500+
$5.1381
1000+
$5.0862
1500+
$5.0343
2000+
$4.9824
2500+
$4.9305
Exquisite packaging
Discount
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Revolutionize your power electronics with Global Power Technology-GPT's G4S06510JT Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Global Power Technology-GPT provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 31.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Isolated Tab
- Supplier Device Package: TO-220ISO
- Operating Temperature - Junction: -55°C ~ 175°C
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