G4S06508QT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A DFN8*
$5.16
Available to order
Reference Price (USD)
1+
$5.16000
500+
$5.1084
1000+
$5.0568
1500+
$5.0052
2000+
$4.9536
2500+
$4.902
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve superior power conversion with G4S06508QT Single Rectifier Diodes from Global Power Technology-GPT. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Global Power Technology-GPT's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 34A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: 4-DFN (8x8)
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Semtech Corporation
SDH7.5K
Microchip Technology
ST3010E3
Microchip Technology
UFR7020R
GeneSiC Semiconductor
S70DR
Comchip Technology
ES8EC-HF
Vishay General Semiconductor - Diodes Division
1N4148W-HG3-18
Microchip Technology
1N250C
Diodes Incorporated
SDM05U20S3-7
Littelfuse Inc.
LSIC2SD120C08A
Microchip Technology