G3SBA80L-6000M3/51
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 2.3A GBU
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with Vishay General Semiconductor - Diodes Division's G3SBA80L-6000M3/51 Bridge Rectifiers, designed for precision and efficiency. These diodes provide high current capacity, fast switching, and excellent noise immunity, making them suitable for telecommunications, medical devices, and industrial automation. Vishay General Semiconductor - Diodes Division ensures quality and performance in every component. Don't hesitate reach out now for pricing and availability!
Specifications
- Product Status: Obsolete
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 2.3 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
Related Products
Vishay General Semiconductor - Diodes Division
GBU4ML-5001E3/45
Micro Commercial Co
TBSL30D-TP
IXYS
VUO60-18NO3
Powerex Inc.
PDA6T6R61230
Comchip Technology
KBU3508-G
Microchip Technology
679-1
IXYS
VBO68-14NO7
Vishay General Semiconductor - Diodes Division
60MT100KB
Central Semiconductor Corp
CBRSDSH5-60 TR13
Powerex Inc.