G3S12010B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
$17.14
Available to order
Reference Price (USD)
1+
$17.14000
500+
$16.9686
1000+
$16.7972
1500+
$16.6258
2000+
$16.4544
2500+
$16.283
Exquisite packaging
Discount
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The G3S12010B from Global Power Technology-GPT is a premium choice in the Discrete Semiconductor Products market, specifically within the Diodes - Rectifiers - Arrays category. These diodes are crafted to deliver exceptional efficiency and longevity, catering to a wide range of electronic applications. With features like high current capacity and thermal stability, the G3S12010B is ideal for automotive, industrial, and consumer electronics. Global Power Technology-GPT ensures top-notch quality and performance in every unit. Get in touch with us today to discuss your requirements and request a sample!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 39A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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