G3S12006B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 6A 3-PI
$10.42
Available to order
Reference Price (USD)
1+
$10.42000
500+
$10.3158
1000+
$10.2116
1500+
$10.1074
2000+
$10.0032
2500+
$9.899
Exquisite packaging
Discount
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Discover high-quality G3S12006B from Global Power Technology-GPT, a leading solution in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Our products are engineered for reliability and efficiency, making them ideal for various industrial and commercial uses. The G3S12006B features excellent performance in rectification and array configurations, ensuring stable and consistent operation. Whether you need components for power supplies, converters, or other electronic devices, Global Power Technology-GPT's diodes are the perfect choice. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 14A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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