G3S12005H
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
$8.14
Available to order
Reference Price (USD)
1+
$8.14000
500+
$8.0586
1000+
$7.9772
1500+
$7.8958
2000+
$7.8144
2500+
$7.733
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-level performance with Global Power Technology-GPT's G3S12005H Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Global Power Technology-GPT stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 21A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 475pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Microchip Technology
JANTXV1N5807/TR
MDD
SB10100L
onsemi
BAS16P2T5G
Vishay General Semiconductor - Diodes Division
1N4004GPE-E3/54
Vishay General Semiconductor - Diodes Division
BYT56B-TAP
Diotec Semiconductor
EGL1A
onsemi
BAT54T1G
Panjit International Inc.
ES1J_R1_00001
NTE Electronics, Inc
NTE5801
Vishay General Semiconductor - Diodes Division