G3S06516B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 16A 3-PI
$10.50
Available to order
Reference Price (USD)
1+
$10.50000
500+
$10.395
1000+
$10.29
1500+
$10.185
2000+
$10.08
2500+
$9.975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G3S06516B by Global Power Technology-GPT is a high-performance diode in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Offering robust construction and advanced features, this product is perfect for engineers and designers seeking reliable components. The G3S06516B excels in efficiency, with minimal power loss and high-speed switching capabilities. Whether for industrial machinery or consumer electronics, Global Power Technology-GPT delivers unmatched quality. Submit your inquiry today to find out how this product can meet your needs!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 25.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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