G3S06510B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 3-PI
$7.67
Available to order
Reference Price (USD)
1+
$7.67000
500+
$7.5933
1000+
$7.5166
1500+
$7.4399
2000+
$7.3632
2500+
$7.2865
Exquisite packaging
Discount
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The G3S06510B by Global Power Technology-GPT is a top choice in the Discrete Semiconductor Products sector, particularly for Diodes - Rectifiers - Arrays. These diodes are designed to meet the highest standards of performance and reliability, offering features like low forward drop and high reverse voltage. Ideal for power supplies, inverters, and more, the G3S06510B ensures efficient energy conversion. Global Power Technology-GPT prides itself on delivering products that exceed expectations. Reach out to us today to discuss your project requirements!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 27A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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