G3R75MT12J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 42A TO263-7
$11.69
Available to order
Reference Price (USD)
1+
$11.69000
500+
$11.5731
1000+
$11.4562
1500+
$11.3393
2000+
$11.2224
2500+
$11.1055
Exquisite packaging
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Enhance your circuit performance with G3R75MT12J, a premium Transistors - FETs, MOSFETs - Single from GeneSiC Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust G3R75MT12J for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 224W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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