G3R45MT17K
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 61A TO247-4
$35.06
Available to order
Reference Price (USD)
1+
$35.06000
500+
$34.7094
1000+
$34.3588
1500+
$34.0082
2000+
$33.6576
2500+
$33.307
Exquisite packaging
Discount
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Optimize your electronic systems with G3R45MT17K, a high-quality Transistors - FETs, MOSFETs - Single from GeneSiC Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, G3R45MT17K provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 438W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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