G3R350MT12J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 11A TO263-7
$5.84
Available to order
Reference Price (USD)
1+
$5.84000
500+
$5.7816
1000+
$5.7232
1500+
$5.6648
2000+
$5.6064
2500+
$5.548
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
GeneSiC Semiconductor presents G3R350MT12J, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, G3R350MT12J delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Vishay Siliconix
SIHP17N60D-E3
Vishay Siliconix
SI2316BDS-T1-GE3
Infineon Technologies
IPB80N08S207ATMA1
onsemi
NDD03N60Z-1G
onsemi
FDP55N06
Rohm Semiconductor
R6530KNXC7G
Infineon Technologies
AUIRFR8401TRL
onsemi
NVTFS4C10NTAG
Infineon Technologies
IPD122N10N3GATMA1
Nexperia USA Inc.