G3R160MT12D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 22A TO247-3
$6.91
Available to order
Reference Price (USD)
1+
$6.91000
500+
$6.8409
1000+
$6.7718
1500+
$6.7027
2000+
$6.6336
2500+
$6.5645
Exquisite packaging
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Upgrade your electronic designs with G3R160MT12D by GeneSiC Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, G3R160MT12D ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 123W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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