G18P03D3
Goford Semiconductor
Goford Semiconductor
P30V,RD(MAX)<10M@-10V,RD(MAX)<15
$0.87
Available to order
Reference Price (USD)
1+
$0.87000
500+
$0.8613
1000+
$0.8526
1500+
$0.8439
2000+
$0.8352
2500+
$0.8265
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with G18P03D3, a reliable Transistors - FETs, MOSFETs - Single by Goford Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, G18P03D3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.15x3.05)
- Package / Case: 8-PowerVDFN
Related Products
Sanyo
2SK1430
onsemi
NTTFS6H854NLTAG
Diodes Incorporated
DMT10H052LFDF-7
Fairchild Semiconductor
FDMS0349
Rohm Semiconductor
R6020ENXC7G
STMicroelectronics
SCTWA60N120G2-4
Harris Corporation
HRF3205L
Fairchild Semiconductor
FDMS8848NZ
Vishay Siliconix
SQD100N04_3M6T4GE3
Renesas Electronics America Inc