FZ1200R17KF4CNOSA1
Infineon Technologies
Infineon Technologies
FZ1200R17 - INSULATED GATE BIPOL
$1,238.75
Available to order
Reference Price (USD)
1+
$1238.75000
500+
$1226.3625
1000+
$1213.975
1500+
$1201.5875
2000+
$1189.2
2500+
$1176.8125
Exquisite packaging
Discount
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Optimize your designs with FZ1200R17KF4CNOSA1 by Infineon Technologies, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, FZ1200R17KF4CNOSA1 is the perfect fit. Contact us today to learn more and place your order with Infineon Technologies.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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