FZ1000R33HE3C1NOSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K
$100,000.00
Available to order
Reference Price (USD)
1+
$99999.99999
500+
$98999.9999901
1000+
$97999.9999902
1500+
$96999.9999903
2000+
$95999.9999904
2500+
$94999.9999905
Exquisite packaging
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The FZ1000R33HE3C1NOSA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1 kA
- Power - Max: 1600000 W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB130-3
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