FT150R12KE3B5BDLA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$199.99
Available to order
Reference Price (USD)
1+
$199.99000
500+
$197.9901
1000+
$195.9902
1500+
$193.9903
2000+
$191.9904
2500+
$189.9905
Exquisite packaging
Discount
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Experience superior performance with FT150R12KE3B5BDLA1 from Infineon Technologies, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, FT150R12KE3B5BDLA1 is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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