FQU3N50CTU
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 2
$0.42
Available to order
Reference Price (USD)
1+
$0.97000
10+
$0.85700
100+
$0.67700
500+
$0.52500
1,000+
$0.41448
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Fairchild Semiconductor presents FQU3N50CTU, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FQU3N50CTU delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Alpha & Omega Semiconductor Inc.
AON6284A
Nexperia USA Inc.
PMCM4401UPEZ
Vishay Siliconix
SISS42DN-T1-GE3
Vishay Siliconix
SI7110DN-T1-GE3
Toshiba Semiconductor and Storage
TK35S04K3L(T6L1,NQ
Vishay Siliconix
SI2392ADS-T1-GE3
Infineon Technologies
BUZ30AH3045AATMA1
STMicroelectronics
STL4N80K5
EPC Space, LLC
FBG10N05AC
STMicroelectronics