FQP17P10
onsemi
onsemi
MOSFET P-CH 100V 16.5A TO220-3
$1.62
Available to order
Reference Price (USD)
1+
$1.59000
10+
$1.40800
100+
$1.12040
500+
$0.87700
1,000+
$0.70001
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover FQP17P10, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Fairchild Semiconductor
RFG40N10
IXYS
IXTP28P065T
Transphorm
TP90H180PS
Infineon Technologies
IPB47N10S33ATMA1
Wolfspeed, Inc.
C3M0065090D
Vishay Siliconix
SI4442DY-T1-GE3
Infineon Technologies
IRFSL3207ZPBF
Diodes Incorporated
DMN10H170SFDE-13
Vishay Siliconix
SI7862ADP-T1-E3
IXYS