FQD2N90TM
onsemi
onsemi
MOSFET N-CH 900V 1.7A DPAK
$1.38
Available to order
Reference Price (USD)
2,500+
$0.54687
5,000+
$0.52103
12,500+
$0.50258
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with FQD2N90TM by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, FQD2N90TM ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
IXTA3N100D2HV
Toshiba Semiconductor and Storage
TK65S04N1L,LXHQ
Nexperia USA Inc.
PMN30XPAX
Vishay Siliconix
SIHH180N60E-T1-GE3
Diodes Incorporated
DMP2225LQ-7
STMicroelectronics
STH3N150-2
STMicroelectronics
STW10N105K5
Rohm Semiconductor
RCD041N25TL
Microchip Technology
DN3545N8-G
onsemi