FQA7N90_F109
onsemi
onsemi
MOSFET N-CH 900V 7.4A TO3P
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with FQA7N90_F109, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FQA7N90_F109 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 198W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Infineon Technologies
IPD60R380C6
Infineon Technologies
IPD06P005LSAUMA1
Toshiba Semiconductor and Storage
2SK2266(TE24R,Q)
Infineon Technologies
IRLR3103TRLPBF
IXYS
IXTC180N055T
Vishay Siliconix
SUD50N02-09P-GE3
Transphorm
TPH3206LD
onsemi
STD110N02RT4G-VF01
onsemi
NTD32N06L
STMicroelectronics