FP200R12N3T7B11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO
$441.60
Available to order
Reference Price (USD)
1+
$441.60000
500+
$437.184
1000+
$432.768
1500+
$428.352
2000+
$423.936
2500+
$419.52
Exquisite packaging
Discount
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Infineon Technologies's FP200R12N3T7B11BPSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
- Current - Collector Cutoff (Max): 20 µA
- Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO3
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