FN4L4M-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
PROGRAM ADAPTER
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Boost your electronic projects with the FN4L4M-T1B-A from Renesas Electronics America Inc, a key player in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer superior performance with features like high switching speed, low power loss, and reliable operation. Ideal for automotive electronics, industrial automation, and consumer gadgets. Renesas Electronics America Inc ensures top-quality components for your needs. Contact us for more information or to request samples!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 Ohms
- Resistor - Emitter Base (R2): 22 Ohms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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