FMMT417TC
Diodes Incorporated
Diodes Incorporated
TRANS NPN 100V 0.5A SOT23-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose FMMT417TC by Diodes Incorporated for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, FMMT417TC is a versatile solution. Ready to order? Submit your inquiry today and let Diodes Incorporated provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Avalanche Mode
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
- Power - Max: 330 mW
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
NXP USA Inc.
PMBT3906/TE1215
Rohm Semiconductor
2SD2264TV2R
onsemi
BC546BG
Diodes Incorporated
DN0150BLP4-7B
STMicroelectronics
STT13005D-K
NXP USA Inc.
BC556B,116
onsemi
KSD568OTU
Micro Commercial Co
KTA1281-Y-AP
Diodes Incorporated
ZTX451STOA
NXP USA Inc.