FMMT415TA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 100V 0.5A SOT23-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose FMMT415TA by Diodes Incorporated for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, FMMT415TA is a versatile solution. Ready to order? Submit your inquiry today and let Diodes Incorporated provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Avalanche Mode
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
- Power - Max: 330 mW
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
onsemi
KSA709COBU
Diodes Incorporated
ZTX450STOA
NXP USA Inc.
PDTD143XT215
onsemi
KSE172STU
Nexperia USA Inc.
BC847C/SNR
Toshiba Semiconductor and Storage
2SA1020-Y(T6CANOAF
Nexperia USA Inc.
PUMD15/ZL115
Toshiba Semiconductor and Storage
2SA1020-Y,T6WNLF(J
Micro Commercial Co
2SB1182-P-TP
onsemi