FJNS3209RBU
onsemi
onsemi
TRANS PREBIAS NPN 300MW TO92S
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Boost your electronic projects with the FJNS3209RBU from onsemi, a key player in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer superior performance with features like high switching speed, low power loss, and reliable operation. Ideal for automotive electronics, industrial automation, and consumer gadgets. onsemi ensures top-quality components for your needs. Contact us for more information or to request samples!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 300 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
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