FJNS3205RBU
onsemi
onsemi
TRANS PREBIAS NPN 300MW TO92S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with the FJNS3205RBU by onsemi, a standout in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are engineered for superior performance and longevity. Notable features include low noise, high frequency response, and excellent thermal characteristics. Suitable for audio amplifiers, LED drivers, and motor control circuits. onsemi is committed to delivering high-quality components. Request a quote or additional information today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 300 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
Related Products
Diodes Incorporated
DDTA143FKA-7-F
NXP USA Inc.
PDTC123ES,126
Infineon Technologies
BCR 101L3 E6327
Rohm Semiconductor
DTC124ESATP
Panasonic Electronic Components
DRA2543E0L
Panasonic Electronic Components
UNR911LJ0L
Panasonic Electronic Components
UNR921VJ0L
Infineon Technologies
BCR 129F E6327
NXP USA Inc.
PDTB123ES,126
Infineon Technologies