FJNS3204RBU
onsemi
onsemi
TRANS PREBIAS NPN 300MW TO92S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the FJNS3204RBU from onsemi for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. onsemi is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 300 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
Related Products
Panasonic Electronic Components
UNR5111G0L
Panasonic Electronic Components
UNR9114G0L
Infineon Technologies
BCR 108T E6327
NXP USA Inc.
PDTA144TE,115
Rohm Semiconductor
DTC363EUT106
Panasonic Electronic Components
UNR51AEG0L
Rohm Semiconductor
DTA143EEBHZGTL
Diodes Incorporated
DDTC143XKA-7-F
Diodes Incorporated
DDTC124XKA-7-F
Rohm Semiconductor