FJNS3201RBU
onsemi
onsemi
TRANS PREBIAS NPN 300MW TO92S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuits with the FJNS3201RBU from onsemi, a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. onsemi provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 300 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
Related Products
Toshiba Semiconductor and Storage
RN2107CT(TPL3)
Infineon Technologies
BCR 183L3 E6327
Panasonic Electronic Components
UNR511L00L
Panasonic Electronic Components
UNR321600L
Panasonic Electronic Components
UNR32A100L
Panasonic Electronic Components
DRC2543E0L
Rohm Semiconductor
DTC114EBT2L
onsemi
FJV3112RMTF
Panasonic Electronic Components
DRA9143T0L
Infineon Technologies