FJN4312RBU
onsemi
onsemi
TRANS PREBIAS PNP 300MW TO92-3
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The FJN4312RBU by onsemi is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. onsemi ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 300 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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