FGH30T65UPDT_F155
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
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The FGH30T65UPDT_F155 Single IGBT from Fairchild Semiconductor delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Fairchild Semiconductor's commitment to innovation ensures FGH30T65UPDT_F155 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
- Power - Max: 250 W
- Switching Energy: 760µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 155 nC
- Td (on/off) @ 25°C: 22ns/139ns
- Test Condition: 400V, 30A, 8Ohm, 15V
- Reverse Recovery Time (trr): 33 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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