FGB5N60UNDF
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$0.00
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Reference Price (USD)
800+
$1.11904
Exquisite packaging
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The FGB5N60UNDF Single IGBT by Fairchild Semiconductor is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Fairchild Semiconductor for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 15 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
- Power - Max: 73.5 W
- Switching Energy: 80µJ (on), 70µJ (off)
- Input Type: Standard
- Gate Charge: 12.1 nC
- Td (on/off) @ 25°C: 5.4ns/25.4ns
- Test Condition: 400V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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