FGA50N100BNTDTU
onsemi
onsemi
IGBT 1000V 50A 156W TO3P
$0.00
Available to order
Reference Price (USD)
1+
$4.79000
10+
$4.31500
450+
$3.38956
900+
$3.05760
1,350+
$2.60333
Exquisite packaging
Discount
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Optimize power control with FGA50N100BNTDTU Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures FGA50N100BNTDTU meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
- Power - Max: 156 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 275 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.5 µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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