FGA30N120FTDTU
onsemi
onsemi
IGBT 1200V 60A 339W TO3P
$0.00
Available to order
Reference Price (USD)
1+
$6.68000
10+
$5.99800
450+
$4.66200
900+
$4.18320
1,350+
$3.52800
Exquisite packaging
Discount
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Optimize power control with FGA30N120FTDTU Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures FGA30N120FTDTU meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 339 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 208 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 730 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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