FGA25N120FTD
onsemi
onsemi
IGBT 1200V 50A 313W TO3P
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Choose FGA25N120FTD Single IGBTs by onsemi for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. onsemi's reputation for quality makes FGA25N120FTD a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
- Power - Max: 313 W
- Switching Energy: 340µJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 48ns/210ns
- Test Condition: 600V, 25A, 15Ohm, 15V
- Reverse Recovery Time (trr): 770 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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