FF6MR12W2M1PB11BPSA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE LOW POWER EASY
$433.92
Available to order
Reference Price (USD)
1+
$433.92000
500+
$429.5808
1000+
$425.2416
1500+
$420.9024
2000+
$416.5632
2500+
$412.224
Exquisite packaging
Discount
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The FF6MR12W2M1PB11BPSA1 by Infineon Technologies is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Infineon Technologies s FF6MR12W2M1PB11BPSA1 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
- Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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