FF6MR12W2M1B70BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-2
$465.28
Available to order
Reference Price (USD)
1+
$465.28000
500+
$460.6272
1000+
$455.9744
1500+
$451.3216
2000+
$446.6688
2500+
$442.016
Exquisite packaging
Discount
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Boost your project s performance with Infineon Technologies s FF6MR12W2M1B70BPSA1, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, FF6MR12W2M1B70BPSA1 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of FF6MR12W2M1B70BPSA1.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
- Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14.7nF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B
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