FF650R17IE4PBOSA1
Infineon Technologies
Infineon Technologies
FF650R17 - INSULATED GATE BIPOLA
$498.70
Available to order
Reference Price (USD)
3+
$507.42333
Exquisite packaging
Discount
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Trust FF650R17IE4PBOSA1 by Infineon Technologies for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, FF650R17IE4PBOSA1 ensures reliability. Get in touch today to request a quote and see why Infineon Technologies is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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