FF45MR12W1M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V 50A
$82.48
Available to order
Reference Price (USD)
1+
$57.60000
24+
$54.11042
Exquisite packaging
Discount
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The FF45MR12W1M1B11BOMA1 from Infineon Technologies is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, FF45MR12W1M1B11BOMA1 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Infineon Technologies s cutting-edge solutions.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1BM-2
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