FF200R12KE3B2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 295A 1050W
$185.20
Available to order
Reference Price (USD)
10+
$110.23400
Exquisite packaging
Discount
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Boost your project's performance with the FF200R12KE3B2HOSA1 IGBT Module by Infineon Technologies. Designed for harsh environments, it provides unmatched efficiency in railway systems, wind turbines, and more. Features like overcurrent protection ensure safety. Let Infineon Technologies power your innovations send your inquiry now!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 295 A
- Power - Max: 1050 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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