FF150R12KE3B8BDLA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$82.68
Available to order
Reference Price (USD)
1+
$82.68000
500+
$81.8532
1000+
$81.0264
1500+
$80.1996
2000+
$79.3728
2500+
$78.546
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FF150R12KE3B8BDLA1 from Infineon Technologies, a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, FF150R12KE3B8BDLA1 guarantees performance and longevity. Interested? Send us an inquiry and let Infineon Technologies support your next project.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
2SB764E-SSH-ON
Microchip Technology
2N2270
Microchip Technology
2N2484UBC/TR
Microchip Technology
JANTXV2N6298
Microchip Technology
JANTX2N1483
Microchip Technology
2N3598
Microchip Technology
JANTX2N4150P
Microchip Technology
JANTXV2N2905AP
Fairchild Semiconductor
2SD1619T-TD-E-FS
Microchip Technology