FESB16DTHE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 16A TO263AB
$1.35
Available to order
Reference Price (USD)
1+
$1.35300
500+
$1.33947
1000+
$1.32594
1500+
$1.31241
2000+
$1.29888
2500+
$1.28535
Exquisite packaging
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Discover high-quality FESB16DTHE3_A/P Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Vishay General Semiconductor - Diodes Division's FESB16DTHE3_A/P delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 175pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -65°C ~ 150°C
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