FDU068AN03L
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 30V 17A/35A IPAK
$0.61
Available to order
Reference Price (USD)
1+
$0.61000
500+
$0.6039
1000+
$0.5978
1500+
$0.5917
2000+
$0.5856
2500+
$0.5795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FDU068AN03L by Fairchild Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FDU068AN03L ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Rohm Semiconductor
R6011KNJTL
IXYS
IXFH130N15X3
IXYS
IXFP90N20X3M
Infineon Technologies
IPW65R060CFD7XKSA1
Fairchild Semiconductor
ISL9N310AD3ST
Vishay Siliconix
SI2304BDS-T1-GE3
NXP USA Inc.
BUK7514-60E,127
Renesas Electronics America Inc
BB502MBS-TR-E
Toshiba Semiconductor and Storage
TK32E12N1,S1X
Fairchild Semiconductor