FDS6675
onsemi
onsemi
MOSFET P-CH 30V 11A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.80604
5,000+
$0.76796
12,500+
$0.74076
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDS6675 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDS6675 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IPI65R099C6
IXYS
IXFN90N30
Infineon Technologies
SPI70N10L
Fairchild Semiconductor
FQB7N80TM
Fairchild Semiconductor
FDMS0302S
STMicroelectronics
STW13NK50Z
IXYS
IXFH15N100Q
Vishay Siliconix
SI4835BDY-T1-E3
onsemi
NTB75N06LT4
Infineon Technologies